Growth and doping of GaN and AIN single crystals under high nitrogen pressureBOCKOWSKI, M.Crystal research and technology (1979). 2001, Vol 36, Num 8-10, pp 771-787, issn 0232-1300Conference Paper

X-ray examination of GaN single crystals grown at high hydrostatic pressureLESZCZYNSKI, M; GRZEGORY, I; BOCKOWSKI, M et al.Journal of crystal growth. 1993, Vol 126, Num 4, pp 601-604, issn 0022-0248Article

DTA determination of the high-pressure-high-temperature phase diagram of CdSeBOCKOWSKI, M; KRUKOWSKI, S; ŁUCZNIK, B et al.Semiconductor science and technology. 1992, Vol 7, Num 7, pp 994-998, issn 0268-1242Article

Photo-etching of HVPE-grown GaN: Revealing extended non-homogeneities induced by periodic carrier gas exchangeWEYHER, J. L; SOCHACKI, T; BOCKOWSKI, M et al.Journal of crystal growth. 2014, Vol 403, pp 77-82, issn 0022-0248, 6 p.Conference Paper

Structural defects in bulk GaNLILIENTAL-WEBER, Z; DOS REIS, R; MANCUSO, M et al.Journal of crystal growth. 2014, Vol 403, pp 66-71, issn 0022-0248, 6 p.Conference Paper

Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studiesKAMINSKA, A; MA, C.-G; BRIK, M. G et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 9, issn 0953-8984, 095803.1-095803.8Article

Gallium nitride growth on sapphire/GaN templates at high pressure and high temperaturesBOCKOWSKI, M; GRZEGORY, I; KRUKOWSKI, S et al.Journal of crystal growth. 2005, Vol 274, Num 1-2, pp 55-64, issn 0022-0248, 10 p.Article

Thermal conductivity of GaN crystals grown by high pressure methodJEZOWSKI, A; STACHOWIAK, P; PLACKOWSKI, T et al.Physica status solidi. B. Basic research. 2003, Vol 240, Num 2, pp 447-450, issn 0370-1972, 4 p.Conference Paper

Synthesis of oxygen-free aluminium nitride ceramicsWITEK, A; BOCKOWSKI, M; PRESZ, A et al.Journal of materials science. 1998, Vol 33, Num 13, pp 3321-3324, issn 0022-2461Article

SHS experiments under high pressureMARIN-AYRAL, R. M; TEDENAC, J. C; BOCKOWSKI, M et al.Annales de chimie (Paris. 1914). 1995, Vol 20, Num 3-4, pp 169-180, issn 0151-9107Article

High pressure phase transition in aluminium nitrideGORCZYCA, I; CHRISTENSEN, N. E; PERLIN, P et al.Solid state communications. 1991, Vol 79, Num 12, pp 1033-1034, issn 0038-1098Article

GaN crystallization by the high-pressure solution growth method on HVPE bulk seedBOCKOWSKI, M; STRAK, P; GRZEGORY, I et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 3924-3933, issn 0022-0248, 10 p.Conference Paper

Blue-laser structures grown on bulk GaN crystalsPRYSTAWKO, P; CZERNECKI, R; NOWAK, G et al.Physica status solidi. A. Applied research. 2002, Vol 192, Num 2, pp 320-324, issn 0031-8965Conference Paper

High-pressure direct synthesis of aluminium nitrideBOCKOWSKI, M; ŁUCZNIK, B; GRZEGORY, I et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 44, pp 11237-11242, issn 0953-8984, 6 p.Conference Paper

Mechanisms of crystallization of bulk GaN from the solution under high N₂ pressureGRZEGORY, I; BOCKOWSKI, M; ŁUCZNIK, B et al.Journal of crystal growth. 2002, Vol 246, Num 3-4, pp 177-186, issn 0022-0248, 10 p.Conference Paper

The role of oxygen and hydrogen in GaNCLERJAUD, B; COTE, D; GRZEGORY, I et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 117-121, issn 0921-4526Conference Paper

Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxyTEISSEYRE, H; LESZCZYNSKI, M; GIBART, P et al.Semiconductor science and technology. 1997, Vol 12, Num 2, pp 240-243, issn 0268-1242Article

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substratesPAKULA, K; WYSMOLEK, A; POROWSKI, S et al.Solid state communications. 1996, Vol 97, Num 11, pp 919-922, issn 0038-1098Article

The microstructure of gallium nitride monocrystals grown at high pressureLESZCZYNSKI, M; GRZEGORY, I; TEISSEYRE, H et al.Journal of crystal growth. 1996, Vol 169, Num 2, pp 235-242, issn 0022-0248Article

Phase diagram determination of II-VI semiconductorsTEDENAC, J. C; JUN, J; KRUKOWSKI, S et al.Thermochimica acta. 1994, Vol 245, pp 207-217, issn 0040-6031Conference Paper

High pressure-high temperature seeded growth of GaN on 1 in sapphire/GaN templates : Analysis of convective transportBOCKOWSKI, M; STRAK, P; KEMPISTY, P et al.Journal of crystal growth. 2007, Vol 307, Num 2, pp 259-267, issn 0022-0248, 9 p.Article

Crystallization of GaN by HVPE on pressure grown seedsGRZEGORY, I; LUCZNIK, B; BOCKOWSKI, M et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1654-1657, issn 1862-6300, 4 p.Conference Paper

Magnetic anisotropy of bulk GaN:Mn single crystals codoped with Mg acceptorsGOSK, J; ZAJAC, M; WOLOS, A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 9, pp 094432.1-094432.7, issn 1098-0121Article

Growth of bulk GaN on GaN/sapphire templates by a high N₂pressure methodBOCKOWSKI, M; GRZEGORY, I; POROWSKI, S et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 12, pp 2685-2688, issn 0370-1972, 4 p.Conference Paper

Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxyHAGEMAN, P. R; KIRILYUK, V; CORBEEK, W. H. M et al.Journal of crystal growth. 2003, Vol 255, Num 3-4, pp 241-249, issn 0022-0248, 9 p.Article